Original Assignee Siliconix Inc Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Harnden Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US07/074,903 Inventor James A. Google Patents Limiting shoot-through current in a power MOSFET half-bridge during intrinsic diode recoveryÄownload PDF Info Publication number US4841166A US4841166A US07/074,903 US7490387A US4841166A US 4841166 A US4841166 A US 4841166A US 7490387 A US7490387 A US 7490387A US 4841166 A US4841166 A US 4841166A Authority US United States Prior art keywords side mosfet source current circuit drain Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US4841166A - Limiting shoot-through current in a power MOSFET half-bridge during intrinsic diode recovery US4841166A - Limiting shoot-through current in a power MOSFET half-bridge during intrinsic diode recovery
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. Archives
December 2022
Categories |